Abstract: We propose a spot size converter using pixelated nano-dots waveguide, to enhance the vertical field confinement. Theoretical analysis shows a converter efficiency of -2.1 dB for the TE mode ...

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Abstract: The 1.2 kV vertical gallium nitride (GaN) fin-channel junction-gate field-effect transistors (Fin-JFETs) have exhibited promising characteristics for power electronic applications, owing to ...