Abstract: A sub-nanometer field-effect transistor (FET) with MoSi2N4 as the channel material is investigated using non-equilibrium Green’s function (NEGF) formalism for possible application in modern ...

Abstract: This paper presents the design of Insulated-Gate Bipolar Transistor cell model with a breakdown voltage of more than $1200 \mathrm{V}, 75$ A made by using Trench technology. The description ...