Abstract: In this paper, H-band (220-325 GHz) power amplifier (PA) integrated circuits (ICs) are presented using 250-nm InP HBT technology, where a cascode topology was adopted to achieve high gain ...

A curated collection of fundamental analog and digital circuit simulations demonstrating core concepts in VLSI design. This repository includes characterization of a CMOS inverter, a common-source ...

Abstract: Derives a new formula for the sensitivity of a vertically matched CMOS sense amplifier, of the type used in dynamic-RAMs (DRAMs), to threshold voltage mismatch, parasitic capacitance ...